◆ Application

• 4", 5", 6" silicon wafer or glass substrate
• System for semiconductor, display and opto-electronics

◆ System Configuration (standard)

• Wafer-to-wafer full automatic handling
• Helical ICP source
• Source & bias RF generators and matchers
• Single chamber for Etching or Ashing
• Vacuum loadlock & robot (3-axis)
• Back side Helium cooling with mechanical chuck (ESC Available)
• Wide range optical emission spectroscope
• Programmable control & GUI
• Wide Range Chiller (-25 ~ 30℃)
• 2200 lps Tmp with Dry pump
• ISO 250 Apc valve

◆ Hardware Specification

• Base Pressure ≤ 1mTorr
• Leak Rate ≤ 2mTorr/min, process chamber
                ≤ 10mTorr/min, L/L chamber
• Cycle test No fail up to 1,000 cycles
• MTBF ＞ 150 hours
• MTTR ＜ 3 hours
• Up time ＞ 85%
• Thruput ＞ 20 wafers/hour (1min processing)

◆ Process Specification

• Process capability up to sub-micron feature size
• HDP etching for noble metal and si trench
• Etch rate ＞ 7,000 Å/min , Oxide
                ＞ 7,000 Å/min , LP Nitride
                ＞ 30,000 Å/min , Si, Poly
                ＞ 20,000 Å/min , PR Ashing
• Selectivity(Silicon to Oxide) ~200:1
• Uniformity ≤ ±5 % within wafer
                 ≤ ±3 % wafer to wafer

◆ Cost & Technology Competitiveness

• Higher performance with lower price
• Customizing backbone
• Lower CoC & easy maintenance